PC28F128J3F75B | Micron 閃存 | Avnet Asia Pacific

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PC28F128J3F75B

NOR Flash Parallel 3V/3.3V 128Mbit 16M/8M x 8bit/16bit 75ns 64-Pin EBGA T/R

Micron
製造商: Micron
產品分類: 記憶體, 閃存
替代料號: PC28F128J3F75B
RoHS 10 Compliant
NCNR
Obsolete

The J3 65 nm SBC device provides improved mainstream performance with enhanced security features, taking advantage of the high quality and reliability of the NOR-based 65 nm technology. Offered in 128-Mbit, 64-Mbit, and 32-Mbit densities, the J3 65 nm SBC device brings reliable, low-voltage capability (3 V read, program, and erase) with high speed, low-power operation. The J3 65 nm SBC device takes advantage of proven manufacturing experience and is ideal for code and data applications where high density and low cost are required, such as in networking, telecommunications, digital set top boxes, audio recording, and digital imaging. Numonyx Flash Memory components also deliver a new generation of forward-compatible software support. By using the Common Flash Interface (CFI) and Scalable Command Set (SCS), customers can take advantage of density upgrades and optimized write capabilities of future Numonyx Flash Memory devices.

技術參數

  • Architecture
    • Symmetrical 128-KB blocks
    • 128 Mbit (128 blocks)
    • 64 Mbit (64 blocks)
    • 32 Mbit (32 blocks)
    • Blank Check to verify an erased block
  • Performance
    • Initial Access Speed: 75ns
    • 25 ns 8-word Asynchronous page-mode reads
    • 256-Word write buffer for x16 mode, 256- Byte write buffer for x8 mode; 1.41 μs per Byte Effective programming time
  • System Voltage
    • VCC = 2.7 V to 3.6 V
    • VCCQ = 2.7 V to 3.6 V
  • Packaging
    • 56-Lead TSOP
    • 64-Ball Easy BGA package
  • Security
    • Enhanced security options for code protection
    • Absolute protection with VPEN = Vss
    • Individual block locking
    • Block erase/program lockout during power transitions
    • Password Access feature
    • One-Time Programmable Register: 64 OTP bits, programmed with unique information by Numonyx 64 OTP bits, available for customer programming
  • Software
    • Program and erase suspend support
    • Numonyx® Flash Data Integrator (FDI)
    • Common Flash Interface (CFI) Compatible
    • Scalable Command Set
  • Quality and Reliability
    • Operating temperature: -40 °C to +85 °C
    • 100K Minimum erase cycles per block
    • 65 nm Flash Technology
    • JESD47E Compliant

技術屬性

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描述
接口 Parallel
閃存類型 NOR
集成電路外殼/封裝 EBGA
額定電源電壓 3, 3.3 V
存儲密度 128 Mbit
存取時間 75 ns
最低工作溫度 -40 °C
集成電路貼裝 Surface Mount
引腳數 64
最高工作溫度 85 °C

ECCN/UNSPSC

描述
ECCN: 3A991.b.1.a
計劃交貨期 B: 8542320050
HTSN: 8542320051
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