製造商:
Micron
MT53D512M16D1DS-046 AIT:D
DRAM, Mobile LPDDR4, 8 Gbit, 512M x 16bit, 2.133 GHz, 200 Pins, WFBGA
替代料號:
MT53D512M16D1DS-046 AIT:D
RoHS 6 Compliant
NCNR
MT53D512M16D1DS-046 AIT:D is an automotive LPDDR4/LPDDR4X SDRAM. The 8Gb mobile low-power DDR4 SDRAM with low VDDQ (LPDDR4X) is a high-speed CMOS, dynamic random-access memory. The device is internally configured with x16 I/O, 8-banks. Each of the x16’s 1,073,741,824-bit banks is organized as 65,536 rows by 1024 columns by 16bits.
技術參數
- 1GB (8Gb) total density, 4266Mb/s data rate per pin, 2133MHz clock rate
- 512 Meg x 16 configuration, LPDDR4, 1 die count, 468ps, t CK RL = 36/40 cycle time
- Frequency range from 2133 to 10MHz (data rate range: 4266–20Mb/s/pin)
- 16n prefetch DDR architecture, 8 internal banks per channel for concurrent operation
- Single-data-rate CMD/ADR entry, bidirectional/differential data strobe per byte lane
- Programmable READ and WRITE latencies, programmable and on-the-fly burst lengths (BL = 16, 32)
- Directed per-bank refresh for concurrent bank operation and ease of command scheduling
- On-chip temperature sensor to control self refresh rate, partial-array self refresh (PASR)
- Selectable output drive strength (DS), clock-stop capability, programmable VSS (ODT) termination
- 200-ball WFBGA package, operating temperature range from -40°C to +95°C
技術屬性
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最高工作溫度 | 95 °C |
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引腳數 | 200 |
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最低工作溫度 | -40 °C |
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額定電源電壓 | 1.1 V |
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時鐘頻率最大值 | 2.133 GHz |
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存儲密度 | 8 Gbit |
ECCN/UNSPSC
| 描述 | 值 |
|---|---|
| ECCN: | EAR99 |
| 計劃交貨期 B: | 8542330000 |
| HTSN: | 8542330001 |