MT41K128M16JT-125 IT:K | Micron DRAM | Avnet Asia Pacific

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MT41K128M16JT-125 IT:K

DDR3L, 2 Gbit, 128M x 16bit, 800 MHz, 96 Pins, FBGA

MT41K128M16JT-125 IT:K | DRAM | Micron
Micron
製造商: Micron
產品分類: 記憶體, DRAM
替代料號: MT41K128M16JT-125 IT:K
RoHS 10 Compliant

MT41K128M16JT-125 IT:K is a 1.35V DDR3L SDRAM device. The double data rate architecture is an 8n-prefetch architecture with an interface designed to transfer two data words per clock cycle at the I/O pins. A single READ or WRITE operation for the DDR3 SDRAM effectively consists of a single 8n-bit-wide, four-clock-cycle data transfer at the internal DRAM core and eight corresponding n-bit-wide, one half-clock-cycle data transfers at the I/O pins. The differential data strobe (DQS, DQS#) is transmitted externally, along with data, for use in data capture at the DDR3 SDRAM input receiver. DQS is center-aligned with data for WRITEs. The read data is transmitted by the DDR3 SDRAM and edge-aligned to the data strobes. The DDR3 SDRAM operates from a differential clock (CKandCK#).

技術參數

  • 128 Meg x 16 configuration, tCK = 1.25ns, CL = 11 speed grade, 16 Meg x 16 x 8 banks configuration
  • 8K refresh count, 16K A[13:0] row address, 8 BA[2:0] bank address, 1K A[9:0] column address
  • 1866MT/s data rate, 11-11-11 target tRCDt-RP-CL, 13.75ns tRCD, 13.75ns tRP, 13.75ns CL
  • VDD = VDDQ = 1.35V (1.283–1.45V), backward-compatible to VDD = VDDQ = 1.5V ±0.075V
  • Differential bidirectional data strobe, 8n-bit prefetch architecture self refresh mode
  • Differential clock inputs (CK, CK#), 8 internal banks, programmable CAS (WRITE) latency (CWL)
  • Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals
  • Programmable CAS (READ) latency (CL), programmable posted CAS additive latency (AL)
  • Fixed burst length (BL) of 8 and burst chop (BC) of 4 (via the mode register set [MRS])
  • 96-ball FBGA package, industrial operating temperature range from -40°C to +95°C

技術屬性

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描述
集成電路貼裝 Surface Mount
集成電路外殼/封裝 FBGA
最低工作溫度 -40 °C
引腳數 96
存儲密度 2 Gbit
存儲器配置 128M x 16bit
最高工作溫度 95 °C
額定電源電壓 1.35 V
時鐘頻率最大值 800 MHz
DRAM類型 DDR3L SDRAM
產品範圍 MT41K Series

ECCN/UNSPSC

描述
ECCN: EAR99
計劃交貨期 B: PARTS...
HTSN: PARTS...
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