MT29F8G08ABBCAH4-IT:C | Micron 閃存 | Avnet Asia Pacific

閒置警告對話框

您的階段作業因為閒置而即將逾時。按一下「確定」以延長您的時間 30 分鐘。

MT29F8G08ABBCAH4-IT:C

Flash Memory, SLC NAND, 8 Gbit, 1G x 8bit, Parallel, VFBGA, 63 Pins

MT29F8G08ABBCAH4-IT:C | 閃存 | Micron
Micron
製造商: Micron
產品分類: 記憶體, 閃存
替代料號: MT29F8G08ABBCAH4-IT:C
RoHS 6 Compliant

MT29F8G08ABBCA is a NAND flash memory. NAND flash device include an asynchronous data interface for high-performance I/O operations. This device use a highly multiplexed 8-bit bus (I/Ox) to transfer commands, address, and data. There are five control signals used to implement the asynchronous data interface: CE#, CLE, ALE, WE#, and RE#. Additional signals control hardware write protection and monitor device status (R/B#). This hardware interface creates a low pin-count device with a standard pinout that remains the same from one density to another, enabling future upgrades to higher densities with no board redesign.

技術參數

  • Single-level cell (SLC) technology, asynchronous I/O performance
  • Array performance, program page is 200µs (typical)
  • Command set is ONFI NAND flash protocol, advanced command set
  • Program page cache mode, read page cache mode, one-time programmable (OTP) mode
  • Operation status byte provides software method for detecting, operation completion
  • Pass/fail condition, write-protect status, quality and reliability
  • RESET (FFh) required as first command after power-on
  • 8Gb density, 8bit device width, SLC level
  • 1.8V (1.7–1.95V) operating voltage, asynchronous interface
  • 63-ball VFBGA (9 x 11 x 1.0mm) package, industrial operating temperature range from –40°C to +85°C

技術屬性

查找類似的料號
描述
接口 Parallel
存儲密度 8 Gbit
集成電路外殼/封裝 VFBGA
集成電路貼裝 Surface Mount
閃存類型 SLC NAND
最低工作溫度 -40 °C
最大電源電壓 1.95 V
最小電源電壓 1.7 V
最高工作溫度 85 °C
存取時間 45 ns
引腳數 63
額定電源電壓 1.8 V

ECCN/UNSPSC

描述
ECCN: 3A991.a.1
計劃交貨期 B: PARTS...
HTSN: PARTS...

文件

您需要登錄才能查看內容
Add To Bom

文檔

標題 下載 類別 發布日期
MIC4-MIC_31901 PCN EOL-Documentation 20160109
MIC4-MIC_31901 PCN Other-Documents 20160109
MIC4-PCN_31901 PCN EOL-Documentation 20160109
全部清除 比較 (0/10)