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MT29F4G16ABBDAH4-IT:D

SLC NAND Flash Parallel 1.8V 4Gbit 256M x 16bit 25ns 63-Pin VFBGA

Micron
製造商: Micron
產品分類: 記憶體, 閃存
替代料號: MT29F4G16ABBDAH4-IT:D
RoHS 6 Compliant

Micron NAND Flash devices include an asynchronous data interface for high-performance I/O operations. These devices use a highly multiplexed 8-bit bus (I/Ox) to transfer commands, address, and data. There are five control signals used to implement the asynchronous data interface: CE#, CLE, ALE, WE#, and RE#. Additional signals control hardware write protection and monitor device status (R/B#). This hardware interface creates a low pin-count device with a standard pinout that remains the same from one density to another, enabling future upgrades to higher densities with no board redesign. A target is the unit of memory accessed by a chip enable signal. A target contains one or more NAND Flash die. A NAND Flash die is the minimum unit that can independently execute commands and report status. A NAND Flash die, in the ONFI specification, is referred to as a logical unit (LUN). There is at least one NAND Flash die per chip enable signal. For further details, see Device and Array Organization. This device has an internal 4-bit ECC that can be enabled using the GET/SET features. See Internal ECC and Spare Area Mapping for ECC for more information.

技術參數

  • Open NAND Flash Interface (ONFI) 1.0-compliant1
  • Single-level cell (SLC) technology
  • Organization
    • Page size x8: 2112 bytes (2048 + 64 bytes)
    • Page size x16: 1056 words (1024 + 32 words)
    • Block size: 64 pages (128K + 4K bytes)
    • Plane size: 2 planes x 2048 blocks per plane
    • Device size: 4Gb: 4096 blocks; 8Gb: 8192 blocks
  • Asynchronous I/O performance
    • tRC/tWC: 20ns (3.3V), 25ns (1.8V)
  • Array performance
    • Read page: 25µs 3
    • Program page: 200µs (TYP: 1.8V, 3.3V)3
    • Erase block: 700µs (TYP)
  • Command set: ONFI NAND Flash Protocol
  • Advanced command set
    • Program page cache mode4
    • Read page cache mode 4
    • One-time programmable (OTP) mode
    • Two-plane commands 4
    • Interleaved die (LUN) operations
    • Read unique ID
    • Block lock (1.8V only)
    • Internal data move
  • Operation status byte provides software method for detecting
    • Operation completion
    • Pass/fail condition
    • Write-protect status
  • Ready/Busy# (R/B#) signal provides a hardware method of detecting operation completion
  • WP# signal: Write protect entire device
  • First block (block address 00h) is valid when shipped from factory with ECC. For minimum required ECC, see Error Management.
  • Block 0 requires 1-bit ECC if PROGRAM/ERASE cycles are less than 1000
  • RESET (FFh) required as first command after power on
  • Alternate method of device initialization (Nand_Init) after power up (contact factory)
  • Internal data move operations supported within the plane from which data is read
  • Quality and reliability
    • Data retention: 10 years
    • Endurance: 100,000 PROGRAM/ERASE cycles
  • Operating voltage range
    • VCC: 2.7–3.6V
    • VCC: 1.7–1.95V
  • Operating temperature:
    • Commercial: 0°C to +70°C
    • Industrial (IT): –40ºC to +85ºC
  • Package
    • 48-pin TSOP type 1, CPL2
    • 63-ball VFBGA

技術屬性

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描述
集成電路貼裝 Surface Mount
存取時間 23 ns
引腳數 63
最低工作溫度 -40 °C
接口 Parallel
集成電路外殼/封裝 VFBGA
閃存類型 SLC NAND
存儲密度 4 Gbit
額定電源電壓 1.8 V
最大電源電壓 1.95 V
最小電源電壓 1.7 V
最高工作溫度 85 °C

ECCN/UNSPSC

描述
ECCN: 3A991.b.1.a
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