MT28EW01GABA1LJS-0SIT | Micron 閃存 | Avnet Asia Pacific

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MT28EW01GABA1LJS-0SIT

Flash Memory, Parallel NOR, 1 Gbit, 64M x 16bit / 128M x 8bit, Parallel, TSOP, 56 Pins

MT28EW01GABA1LJS-0SIT | 閃存 | Micron
Micron
製造商: Micron
產品分類: 記憶體, 閃存
替代料號: MT28EW01GABA1LJS-0SIT
RoHS 10 Compliant

MT28EW01GABA1LJS-0SIT is an asynchronous, uniform block, parallel NOR flash memory device. READ, ERASE, and PROGRAM operations are performed using a single low-voltage supply. Upon power-up, the device defaults to read array mode. The main memory array is divided into uniform blocks that can be erased independently so that valid data can be preserved while old data is purged. PROGRAM and ERASE commands are written to the command interface of the memory. An on-chip program/ erase controller simplifies the process of programming or erasing the memory by taking care of all special operations required to update the memory contents. The end of a PROGRAM or ERASE operation can be detected and any error condition can be identified. The command set required to control the device is consistent with JEDEC standards.

技術參數

  • 2.7V to 3.6V supply voltage (VCC)
  • 1Gb density, single die stack
  • 2nd generation, low lock structure
  • Standard default security, single-level cell (SLC) process technology
  • BLANK CHECK operation to verify an erased block, program/erase suspend and resume capability
  • Word/byte program: 25us per word (typ), block erase (128Kb): 0.2s (typ)
  • JESD47-compliant, 100,000 (minimum) ERASE cycles per block, data retention: 20 years (TYP)
  • Unlock bypass, block erase, chip erase, and write to buffer capability
  • Volatile protection, non-volatile protection, password protection
  • Industrial operating temperature range from -40°C to +85°C, package style is 56-pin TSOP

技術屬性

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描述
集成電路外殼/封裝 56 TSOP 14x20x1.2
引腳數 56
存儲密度 1 Gbit
最大電源電壓 3.6 V
集成電路貼裝 Surface Mount
閃存類型 NOR
接口 Parallel
存取時間 95 ns
最高工作溫度 85 °C
額定電源電壓 3 V
最小電源電壓 2.7 V
最低工作溫度 -40 °C

ECCN/UNSPSC

描述
ECCN: 3A991.b.1.a
計劃交貨期 B: 8542320050
HTSN: 8542320051
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