MT25QU512ABB8E12-0SIT | Micron 閃存 | Avnet Asia Pacific

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MT25QU512ABB8E12-0SIT

Flash Memory, Serial NOR, 512 Mbit, 64M x 8bit, SPI, 24 Pins, TPBGA

MT25QU512ABB8E12-0SIT | 閃存 | Micron
Micron
製造商: Micron
產品分類: 記憶體, 閃存
替代料號: MT25QU512ABB8E12-0SIT
RoHS 10 Compliant

The MT25Q is a high-performance multiple input/output serial Flash memory device manufactured on 45nm NOR technology. It features a high-speed SPI-compatible bus interface, execute-in-place (XIP) functionality, advanced write protection mechanisms, and extended address access. Innovative, high-performance, dual and quad input/ output commands enable double or quadruple the transfer bandwidth for READ and PROGRAM operations.

技術參數

  • SPI-compatible serial bus interface
  • Single and double transfer rate (STR/DTR)
  • Clock frequency
    • 133 MHz (MAX) for all protocols in STR
    • 66 MHz (MAX) for all protocols in DTR
  • Dual/quad I/O commands for increased throughput up to 65 MB/s
  • Supported protocols in both STR and DTR
    • Extended I/O protocol
    • Dual I/O protocol
    • Quad I/O protocol
  • Execute-in-place (XIP)
  • PROGRAM/ERASE SUSPEND operations
  • Volatile and nonvolatile configuration settings
  • Software reset
  • Additional reset pin for selected part numbers
  • 3-byte and 4-byte address modes -- enable memory access beyond 128Mb
  • Dedicated 64-byte OTP area outside main memory
    • Readable and user-lockable
    • Permanent lock with PROGRAM OTP command
  • Erase capability
    • Bulk erase
    • Sector erase 64KB uniform granularity
    • Subsector erase 4KB, 32KB granularity
  • Security and write protection
    • Volatile and nonvolatile locking and software write protection for each 64KB sector
    • Nonvolatile configuration locking
    • Password protection
    • Hardware write protection: nonvolatile bits (BP[3:0] and TB) define protected area size
    • Program/erase protection during power-up
    • CRC detects accidental changes to raw data
  • Electronic signature
    • JEDEC-standard 3-byte signature (BA20h)
    • Extended device ID: two additional bytes identify device factory options
  • JESD47H-compliant
    • Minimum 100,000 ERASE cycles per sector
    • Data retention: 20 years (TYP)

技術屬性

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描述
閃存類型 NOR
集成電路貼裝 Surface Mount
最大電源電壓 2 V
最高工作溫度 85 °C
額定電源電壓 1.8 V
存儲密度 512 Mbit
集成電路外殼/封裝 TBGA
接口 SPI
引腳數 24
最小電源電壓 1.7 V
最低工作溫度 -40 °C
存取時間 6 ns
時鐘頻率最大值 166 MHz

ECCN/UNSPSC

描述
ECCN: 3A991.b.1.a
計劃交貨期 B: PARTS...
HTSN: PARTS...
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