MT25QU128ABA8E12-0AAT | Micron 閃存 | Avnet Asia Pacific

閒置警告對話框

您的階段作業因為閒置而即將逾時。按一下「確定」以延長您的時間 30 分鐘。

MT25QU128ABA8E12-0AAT

NOR Flash Serial-SPI 1.8V 128Mbit 128M/64M/32M 1bit/2bit/4bit 6ns 24-Pin TBGA

MT25QU128ABA8E12-0AAT | 閃存 | Micron
Micron
製造商: Micron
產品分類: 記憶體, 閃存
替代料號: MT25QU128ABA8E12-0AAT
RoHS 10 Compliant

The MT25Q is a high-performance multiple input/output serial Flash memory device. It features a high-speed SPI-compatible bus interface, execute-in-place (XIP) functionality, advanced write protection mechanisms, and extended address access. Innovative, high-performance, dual and quad input/output commands enable double or quadruple the transfer bandwidth for READ and PROGRAM operations.

技術參數

  • SPI-compatible serial bus interface
  • Single and double transfer rate (STR/DTR)
  • Clock frequency
    • 166 MHz (MAX) for all protocols in STR
    • 90 MHz (MAX) for all protocols in DTR
  • Dual/quad I/O commands for increased throughput up to 90 MB/s
  • Supported protocols in both STR and DTR
    • Extended I/O protocol
    • Dual I/O protocol
    • Quad I/O protocol
  • Execute-in-place (XIP)
  • PROGRAM/ERASE SUSPEND operations
  • Volatile and nonvolatile configuration settings
  • Software reset
  • Additional reset pin for selected part numbers
  • Dedicated 64-byte OTP area outside main memory
    • Readable and user-lockable
    • Permanent lock with PROGRAM OTP command
  • Erase capability
    • Bulk erase
    • Sector erase 64KB uniform granularity
    • Subsector erase 4KB, 32KB granularity
  • Security and write protection
    • Volatile and nonvolatile locking and software write protection for each 64KB sector
    • Nonvolatile configuration locking
    • Password protection
    • Hardware write protection: nonvolatile bits (BP[3:0] and TB) define protected area size
    • Program/erase protection during power-up
    • CRC detects accidental changes to raw data
  • Electronic signature
    • JEDEC-standard 3-byte signature (BA18h)
    • Extended device ID: two additional bytes identify device factory options
  • JESD47H-compliant
    • Minimum 100,000 ERASE cycles per sector
    • Data retention: 20 years (TYP) Options Marking
  • Voltage
    • 1.7–2.0V U
  • Density
    • 128Mb 128
  • Device stacking
    • Monolithic A
  • Device generation B
  • Die revision A
  • Pin configuration
    • RESET# and HOLD# 8
  • Sector Size
    • 64KB E
  • Packages
    • JEDEC-standard, RoHScompliant
    • 24-ball T-PBGA, 05/6mm x 8mm (5 x 5 array) 12
    • 24-ball T-PBGA 05/6mm x 8mm (4 x 6 array) 14
    • Wafer level chip-scale package,15 balls , 9 active balls (XFWLBGA 0.5P) 54
    • 8-pin SOP2, 208 mils body width (SO8W) SE
    • 16-pin SOP2, 300 mils body width (SO16W) SF
    • W-PDFN-8 6mm x 5mm (MLP8 6mm x 5mm) W7
    • W-PDFN-8 8mm x 6mm (MLP8 8mm x 6mm) W9
  • Standard security 0
  • Special options
    • Standard S
    • Automotive A
  • Operating temperature range
    • From –40°C to +85°C IT
    • From –40°C to +105°C AT 128Mb, 1.8V Multiple I/O Serial Flash Memory Features PDF: 09005aef85830b66 mt25q_qlhs_U_128_ABA_xxT.pdf - Rev. H

技術屬性

查找類似的料號
描述
接口 SPI
集成電路外殼/封裝 TBGA
引腳數 24
最低工作溫度 -40 °C
存儲密度 128 Mbit
額定電源電壓 1.8 V
集成電路貼裝 Surface Mount
最高工作溫度 105 °C
閃存類型 NOR
最小電源電壓 1.7 V
最大電源電壓 2 V
時鐘頻率最大值 166 MHz
存取時間 6 ns

ECCN/UNSPSC

描述
ECCN: 3A991
計劃交貨期 B: 8542320050
HTSN: 8542320051
全部清除 比較 (0/10)