製造商:
Micron
MT25QL512ABB8E12-0SIT
Flash Memory, Serial NOR, 512 Mbit, 64M x 8bit, SPI, 24 Pins, TPBGA
替代料號:
MT25QL512ABB8E12-0SIT
RoHS 10 Compliant
MT25QL512ABB8E12-0SIT is a 3V, multiple I/O, sector erase, high-performance multiple input/output serial NOR flash memory device. It features a high-speed SPI-compatible bus interface, execute-in-place (XIP) functionality, advanced write protection mechanisms, and extended address access. Innovative, high-performance, dual, and quad input/output commands enable double or quadruple the transfer bandwidth for READ and PROGRAM operations.
技術參數
- Voltage range from 2.7 to 3.6V, 512Mb (64MB) density, 1 die/1 S# stack, 2nd generation
- Die Rev. B, RESET# and HOLD# pin configuration, 64KB sectors, 4KB and 32KB sub-sectors size
- Standard default security
- SPI-compatible serial bus interface, single and double transfer rate (STR/DTR)
- 133MHz (MAX) for all protocols in STR, 90MHz (MAX) for all protocols in DTR
- Dual/quad I/O commands for increased throughput up to 90MB/s
- Extended I/O protocol, dual I/O protocol, quad I/O protocol, minimum 100,000 ERASE cycles per sector
- Execute-in-place (XIP), PROGRAM/ERASE SUSPEND operations, data retention: 20 years (TYP)
- Volatile and nonvolatile configuration settings, software reset, reset pin available
- 24-ball T-PBGA package, operating temperature range from -40°C to +85°C
技術屬性
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描述 | 值 |
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存取時間 | 6 ns |
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集成電路外殼/封裝 | TPBGA |
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閃存類型 | NOR |
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集成電路貼裝 | Surface Mount |
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最低工作溫度 | -40 °C |
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最高工作溫度 | 85 °C |
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存儲密度 | 512 Mbit |
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額定電源電壓 | 3 V |
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最小電源電壓 | 2.7 V |
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最大電源電壓 | 3.6 V |
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引腳數 | 24 |
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時鐘頻率最大值 | 133 MHz |
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接口 | SPI |
ECCN/UNSPSC
| 描述 | 值 |
|---|---|
| ECCN: | 3A991.b.1.a |
| 計劃交貨期 B: | PARTS... |
| HTSN: | PARTS... |