MT16KTF1G64HZ-1G9P1 | Micron RAM存儲模塊 | Avnet Asia Pacific

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MT16KTF1G64HZ-1G9P1

RAM Memory Module, 8 GB, 933 MHz, PC3-14900, 204-Pin DDR3L SODIMM, Notebook SODIMM

MT16KTF1G64HZ-1G9P1 | RAM存儲模塊 | Micron
Micron
製造商: Micron
產品分類: 記憶體, RAM存儲模塊
替代料號: MT16KTF1G64HZ-1G9P1
RoHS 10 Compliant
NCNR
Obsolete

MT16KTF1G64HZ-1G9P1 is a 1.35V DDR3L SDRAM SODIMM memory module. This module is a high-speed, CMOS dynamic random access memory module that uses an internally configured 8-bank DDR3 SDRAM device. DDR3 SDRAM module uses DDR architecture to achieve high-speed operation. DDR3 architecture is essentially an 8n-prefetch architecture with an interface designed to transfer two data words per clock cycle at the I/O pins. A single read or write access for the DDR3 SDRAM module effectively consists of a single 8n-bit-wide, one-clock-cycle data transfer at the internal DRAM core and eight corresponding n-bit-wide, one-half-clock-cycle data transfers at the I/O pins. DDR3 module uses two sets of differential signals: DQS, DQS# to capture data, and CK and CK# to capture commands, addresses, and control signals. Differential clocks and data strobes ensure exceptional noise immunity for these signals and provide precise crossing points to capture input signals.

技術參數

  • 8GB module density, 1 Gig x 64 configuration, 14.9GB/s module bandwidth
  • 13-13-13 clock cycles (CL-tRCD-tRP), PC3-14900 industry nomenclature, 8K refresh count
  • 8 BA[2:0] device bank address, 4Gb (512 Meg x8) device configuration
  • 1K A[9:0] column address, 2 S#[1:0] module rank address
  • Fast data transfer rates: PC3-14900, PC3-12800, or PC3-10600, dual rank
  • VDD = 1.35V (1.283V–1.45V), VDD = 1.5V (1.425–1.575V)
  • Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals
  • Gold edge contacts, fly-by topology, terminated control, command, and address bus
  • 204-pin DIMM package, commercial operating temperature range from 0°C to +70°C

技術屬性

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描述
引腳數 204
模塊外形尺寸 204-Pin DDR3L SO-DIMM
時鐘頻率最大值 933 MHz
最低工作溫度 0 °C
最高工作溫度 70 °C
存儲密度 8 GB
存儲器配置 1Gx64
最大電源電壓 1.575, 1.575 V
額定電源電壓 1.5, 1.5 V
內存速度 933 MHz
產品範圍 Notebook RAM
最小電源電壓 1.283, 1.425 V

ECCN/UNSPSC

描述
ECCN: 4A994.a
計劃交貨期 B: PARTS...
HTSN: PARTS...

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MIC4-MIC_31991 PCN EOL-Documentation 20160109
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