製造商:
ISSI
IS42S16100H-7BLI
DRAM Chip SDRAM 16M-Bit 1Mx16 3.3V 60-Pin TFBGA
替代料號:
IS42S16100H-7BLI
RoHS 10 Compliant
The 16Mb Synchronous DRAM IS42S16100H is organized as a 524,288-word x 16-bit x 2-bank for improved performance. The synchronous DRAMs achieve high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input.
技術參數
- Clock frequency: 200, 166, 143 MHz
- Fully synchronous; all signals referenced to a positive clock edge
- Two banks can be operated simultaneously and independently
- Dual internal bank controlled by A11 (bank select)
- Single 3.3V power supply
- LVTTL interface
- Programmable burst length
- (1, 2, 4, 8, full page)
- Programmable burst sequence: Sequential/Interleave
- 2048 refresh cycles every 32ms (Com, Ind, A1 grade) or 16ms (A2 grade)
- Random column address every clock cycle
- Programmable CAS latency (2, 3 clocks)
- Burst read/write and burst read/single write operations capability
- Burst termination by burst stop and precharge command
- Byte controlled by LDQM and UDQM
- Packages: 400-mil 50-pin TSOP-II and 60-ball TF-BGA
- Temperature Grades
- Commercial (0° C to +70°C)
- Industrial (-40° C to +85°C)
技術屬性
查找類似的料號|
|
描述 | 值 |
|---|---|---|
|
|
時鐘頻率最大值 | 143 MHz |
|
|
引腳數 | 60 |
|
|
最低工作溫度 | -40 °C |
|
|
額定電源電壓 | 3.3 V |
|
|
存儲密度 | 16 Mbit |
|
|
最高工作溫度 | 85 °C |
|
|
存儲器配置 | 1M x 16 |
|
|
集成電路貼裝 | Surface Mount |
ECCN/UNSPSC
| 描述 | 值 |
|---|---|
| ECCN: | EAR99 |
| 計劃交貨期 B: | 8542320015 |
| HTSN: | 8542320002 |