MT29AZ5A3CHHTB-18AAT.109 | Micron 组合存储器 | Avnet Asia Pacific

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MT29AZ5A3CHHTB-18AAT.109

Combo Memory, 32-bit, 2 Gbit Mobile LPDDR2 S4, 4 Gbit Nand Based MCP, 162 Pins, VFBGA

MT29AZ5A3CHHTB-18AAT.109 | 组合存储器 | Micron
Micron
制造商: Micron
产品分类: 内存, 组合存储器
安富利制造商模型#: MT29AZ5A3CHHTB-18AAT.109
RoHS 6 Compliant

MT29AZ5A3CHHTB-18AAT.109 is a NAND flash with automotive LPDDR2 in 162-ball space-saving multichip package (MCP). It is a NAND flash device includes an asynchronous data interface for high-performance I/O operations. This device uses a highly multiplexed 8bit bus (I/Ox) to transfer commands, address, and data. There are five control signals used to implement the asynchronous data interface: CE#, CLE, ALE, WE#, and RE#. Additional signals control hardware write protection and monitor device status (R/B#). This hardware interface creates a low pin-count device with a standard pinout that remains the same from one density to another, enabling future upgrades to higher densities with no board redesign. A target is the unit of memory accessed by a chip enable signal. A target contains one or more NAND flash die. There is at least one NAND flash die per chip enable signal.

技术参数

  • Separate NAND flash and LPDDR2 interfaces, low-voltage operation
  • Open NAND flash Interface (ONFI) 1.0-compliant, single-level cell (SLC) technology
  • Page size x8: 4352bytes (4096 + 256bytes), block size: 64 pages, number of planes: 1
  • Ultra-low-voltage 1.2V core power supply, 1.2V HSUL-compatible inputs
  • Programmable READ and WRITE latencies, programmable burst lengths: 4, 8, or 16
  • Partial-array self refresh (PASR), deep power-down (DPD) mode, selectable output drive strength
  • Endurance: 100,000 PROGRAM/ERASE cycles IT temperature range
  • Additional: uncycled data retention: 10years 24/7 at 85°C, AEC-Q100 qualified
  • 4Gb, x8 NAND, 2Gb, x32 LPDDR
  • 162-ball VFBGA package, automotive operating temperature range from -40°C to +105°C

技术特性

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描述
时钟频率最大值 533 MHz
集成电路外壳/封装 VFBGA
集成电路安装 Surface Mount
DRAM类型 Mobile LPDDR2
最低工作温度 -40 °C
最高工作温度 105 °C
额定电源电压 1.8 V
DRAM密度 2 Gbit
数据总线宽度 8-bit
NAND/NOR密度 4 Gbit
MCP类型 Nand Based MCP
次级总线宽度 32-bit
引脚数 162

ECCN / UNSPSC

描述
ECCN: 3A991
HTSN: 8542320071
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