IS25LP064A-JKLE-TR | ISSI 闪存 | Avnet Asia Pacific

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IS25LP064A-JKLE-TR

NOR Flash Serial-SPI 3V 64Mbit 64M 1bit 8ns 8-Pin WSON T/R

IS25LP064A-JKLE-TR | 闪存 | ISSI
ISSI
制造商: ISSI
产品分类: 内存, 闪存
安富利制造商模型#: IS25LP064A-JKLE-TR
RoHS 6 Compliant

The IS25LP064A Serial Flash memory offers a versatile storage solution with high flexibility and performance in a simplified pin count package. Flash are for systems that require limited space, a low pin count, and low power consumption. The device is accessed through a 4- wire SPI Interface consisting of a Serial Data Input (SI), Serial Data Output (SO), Serial Clock (SCK), and Chip Enable (CE#) pins, which can also be configured to serve as multi-I/O (see pin descriptions). The device supports Dual and Quad I/O as well as standard, Dual Output, and Quad Output SPI. Clock frequencies of up to 133MHz allow for equivalent clock rates of up to 532MHz (133MHz x 4) which equates to 66Mbytes/s of data throughput. The IS25xP series of Flash adds support for DTR (Double Transfer Rate) commands that transfer addresses and read data on both edges of the clock. These transfer rates can outperform 16-bit Parallel Flash memories allowing for efficient memory access to support XIP (execute in place) operation. The memory array is organized into programmable pages of 256-bytes. This family supports page program mode where 1 to 256 bytes of data are programmed in a single command. QPI (Quad Peripheral Interface) supports 2-cycle instruction further reducing instruction times. Pages can be erased in groups of 4Kbyte sectors, 32Kbyte blocks, 64Kbyte blocks, and/or the entire chip. The uniform sector and block architecture allows for a high degree of flexibility so that the device can be utilized for a broad variety of applications requiring solid data retention.

技术参数

  • Industry Standard Serial Interface
    • IS25LP064A: 64Mbit/8Mbyte
    • IS25LP032A: 32Mbit/4Mbyte
    • 256 bytes per Programmable Page
    • Supports standard SPI, Fast, Dual, Dual I/O, Quad, Quad I/O, SPI DTR, Dual I/O DTR, Quad I/O DTR, and QPI
    • Double Transfer Rate (DTR) option
    • Supports Serial Flash Discoverable Parameters (SFDP)
  • High Performance Serial Flash (SPI)
    • 133Mhz Fast Read at Vcc=2.7V to 3.6V
    • 104Mhz Fast Read at Vcc=2.3V to 3.6V
    • 532MHz equivalent at QPI operation
    • 50MHz Normal Read
    • DTR (Dual Transfer Rate) up to 66MHz
    • Selectable dummy cycles
    • Configurable drive strength
    • Supports SPI Modes 0 and 3
    • More than 100,000 erase/program cycles
    • More than 20
    • year data retention
  • Flexible and Efficient Memory Architecture
    • Chip Erase with Uniform Sector/block Erase (4/32/64 Kbyte)
    • Program 1 to 256 bytes per page
    • Program/Erase Suspend and Resume Efficient Read and Program modes
    • Low Instruction Overhead Operations
    • Continuous Read 8/16/32/64
    • Byte burst Wrap
    • Selectable burst length
    • QPI for reduced instruction overhead
  • Low Power with Wide Temp. Ranges
    • Single 2.3V to 3.6V Voltage Supply
    • 5 mA Active Read Current (typ.)
    • 10 µA Standby Current (typ.)
    • 5 µA Deep Power Down (typ.)
    • Temp Grades: Extended: -40°C to +105°C ,Extended+: -40°C to +125°C(1), Auto Grade: up to +125°C
  • Advanced Security Protection
    • Software and Hardware Write Protection
    • Power Supply lock protect
    • 4x256
    • Byte dedicated security area with OTP user
    • lockable bits
    • 128 bit Unique ID for each
  • Industry Standard Pin-out and Packages
    • 8-pin SOIC 208mil
    • 8-pin VSOP 208mil
    • 8-contact WSON 6x5mm
    • 8-contact WSON 8x6mm
    • 16-pin SOIC 300mil(3)
    • 24-ball TFBGA 6x8mm 4x6(3)
    • 24-ball TFBGA 6x8mm 5x5
    • KGD

技术特性

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描述
存取时间 8 ns
接口类型 4-Wire, DTR, QPI, SPI
时钟频率最大值 133 MHz
最大电源电压 3.6 V
存储密度 64 Mbit
集成电路安装 Surface Mount
集成电路外壳/封装 WSON
引脚数 8
额定电源电压 3 V
最小电源电压 2.3 V
最低工作温度 -40 °C
最高工作温度 105 °C
闪存类型 NOR

ECCN / UNSPSC

描述
ECCN: 3A991.b.1.a
计划交货期 B: 8542320070
HTSN: 8542320071
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