AS4C64M16D1-6TCN by Alliance Memory DRAMs | Avnet Asia Pacific

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AS4C64M16D1-6TCN

DRAM Chip DDR SDRAM 1G-Bit 64Mx16 2.5V/2.6V 66-Pin TSOP-II

Alliance Memory
Manufacturer: Alliance Memory
Product Category: Memory, DRAMs
Avnet Manufacturer Part #: AS4C64M16D1-6TCN
RoHS 6 Compliant

The AS4C64M16D1 is a four bank DDR DRAM organized as 4 banks x 16Mbit x 16. The AS4C64M16D1 achieves high speed data transfer rates by employing a chip architecture that prefetches multiple bits and then synchronizes the output data to a system clock.All of the controls, address, circuits are synchronized with the positive edge of an externally supplied clock. I/O transactions are occurring on both edges of DQS.Operating the four memory banks in an interleaved fashion allows random access operation to occur at a higher rate than is possible with standard DRAMs. A sequential and gapless data rate is possible depending on burst length, CAS latency and speed grade of the device.

Key Features

  • High speed data transfer rates with system frequency up to 200MHz
  • Data Mask for Write Control
  • Four Banks controlled by BA0 & BA1
  • Programmable CAS Latency: 2, 2.5, 3
  • Programmable Wrap Sequence:
    • Sequential or Interleave
  • Programmable Burst
    • Length: 2, 4, 8 for Sequential Type 2, 4, 8 for Interleave Type
  • Automatic and Controlled Precharge Command
  • Power Down Mode
  • Auto Refresh and Self Refresh
  • Refresh Interval: 8192 cycles/64 ms
  • Available in 66 Pin TSOP II
  • SSTL
  • 2 Compatible I/Os
  • Double Data Rate (DDR)
  • Bidirectional Data Strobe (DQS) for input and output data, active on both edges
  • On
  • Chip DLL aligns DQ and DQs transitions with CK transitions
  • Differential clock inputs CK and CK
  • VDD = 2.5V ± 0.2V, VDDQ = 2.5V ± 0.2V, VDD = 2.6V ± 0.1V, VDDQ = 2.6V ± 0.1V (DDR400)
  • tRAS lockout supported
  • Concurrent auto precharge option is supported

Technical Attributes

Find Similar Parts
Description Value
Operating Temperature Min 0 °C
DRAM Type DDR SDRAM
Clock Frequency Max 166 MHz
Operating Temperature Max 70 °C
No. of Pins 66
Memory Configuration 64M x 16
IC Case / Package TSOP-II
IC Mounting Surface Mount
Memory Density 1 Gbit
Supply Voltage Nom 2.5 V

ECCN / UNSPSC / COO

Description Value
ECCN: EAR99
SCHEDULE B: 8542320070
HTSN: 8542320071
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