FDG6303N
Dual N-Channel Digital FET 25V, 0.50A, 0.45O
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Manufacturer:onsemi
Product Category:
Discretes, FETs, MOSFET Arrays
Avnet Manufacturer Part #: FDG6303N
Secondary Manufacturer Part#: FDG6303N
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RoHS 10 Compliant -
Tariff Charges
FDG6303N is a dual N-channel logic level enhancement mode field effect transistor (FET) produced using ON Semiconductor’s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for bipolar digital transistors and small signal MOSFETs.
- 500mA continuous drain current
- 25V drain source voltage
- Very low level gate drive requirements allowing direct operation in 3V circuits (VGS(th) < 1.5V)
- Gate-source Zener for ESD ruggedness (>6KV human body model)
- 6 pin SOT-363 package
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| Dual N Channel | ||
| 500 mA | ||
| 450 mOhm | ||
| 25 V | ||
| 6 | ||
| 150 °C | ||
| 300 mW | ||
| SOT-363 |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | null |
| ECCN: | EAR99 |
| HTSN: | 8541210095 |
| Schedule B: | 8541210080 |
Factory Lead Time: