SiC Power MOSFET for AI Server

Toshiba 3kW Power Supply Reference Solution for AI Servers Using Surface-Mounted SiC MOSFET

With the rapid rise of generative AI, demand for high-performance AI servers is growing. This reference design provides a 3kW power supply for AI servers with high power requirements. By incorporating our surface-mount SiC MOSFETs, it achieves high power density.
Design tips on each portion of the circuit, method of operation, and design information such as circuit diagrams and PCB patterns are available, please use them for your design.  

The widespread adoption of AI and the increasing sophistication of data centers is fast raising power consumption. The power systems that support them are required to deliver higher efficiency and higher power density, which is increasing the importance of power semiconductors that operate at high frequencies. This is particularly true for power equipment such as inverters and uninterruptible power supplies (UPS) that must meet efficiency and size requirements.    

Features

• Provides appropriate power devices (MOSFET and SiC diode) and digital Isolator totally.
• Achieving high power density through the adoption of surface-mounted devices (34% improvement compared to our existing design).
• Total efficiency 94.8% (Vin = 230V at 100% load condition)

Applications

Power Supply for AI Server

Key components

Circuit topology: Semi-Bridgeless PFC, Phase-Shift Full-Bridge + Synchronous Rectification, ORing Circuit for Output

Block diagram