Toshiba SiC MOSFET for Sustainability New Energy Industry

Toshiba releases three new 650V SiC MOSFET devices in TOLL package (TW027U65C, TW048U65C, and TW083U65C) which boost efficiency and power density of industrial equipment.

Toshiba’s new 3rd generation SiC MOSFETs in a general-purpose surface-mount TOLL package, which reduces device volume by more than 80% compared to through-hole packages such as TO-247 and TO-247-4L(X), and improves equipment power density.

The TOLL package also offers lower parasitic impedance than through-hole packages, which helps to reduce switching losses. As a 4-terminal package, a Kelvin connection can be used as the signal source terminal for the gate drive. This reduces the influence of inductance in the source wire within the package, achieving high-speed switching performance; in the case of TW048U65C, turn-on loss and turn-off loss are approximately 55% and 25% lower, respectively, than in current Toshiba SiC MOSFET products, which will contribute to lower equipment power loss.

Toshiba will continue to expand its lineup to contribute to improved equipment efficiency and increased power capacity.

Features

• Surface-mount TOLL package: Enables equipment miniaturization and automated assembly. Low switching loss.
• Toshiba’s 3rd generation SiC MOSFETs:

            Optimization of drift resistance and channel resistance ratio realizes good temperature dependence of drain-source On-resistance.
            Low drain-source On-resistance×gate-drain charges
            Low diode forward voltage: VDSF=-1.35V (typ.) (VGS=-5V) 

• Explanation websitre link for Kelvin connection: https://toshiba.semicon-storage.com/ap-en/semiconductor/knowledge/faq/mosfet/what-is-kelvin-connection.html

Application

• Switched-mode power supplies in servers, data centers, communications equipment, etc.
• EV charging stations
• Photovoltaic inverters
• Uninterruptible power supplies