Small MOSFETs for Indoor Asset Tracking Devices

Battery-powered IoT devices are increasingly required to be driven for longer time in addition to their increasingly high functionality.

To meet this requirement, not only on the battery side but also on the device side, it is necessary to reduce the average power consumption.

Toshiba Electronic Devices & Storage Corporation ("Toshiba") has launched small MOSFETs featuring low gate leakage current and low drain cut-off current for portable equipment and IoT devices such as wearable devices and tablet devices.

The Toshiba SSM3K79 and SSM3K15A series of MOSFET products offers low drain cut-off current and low gate leakage when the MOSFETs are in the on state (at VGS=5V). These characteristics are suitable for applications that require to minimize total energy increased by high-density design of semiconductor devices and for battery-powered portable devices. They significantly help energy saving and battery longevity of the equipment.

The new products are 29 types of 6 series: 4 series of 30V and 20V N-channel MOSFETs and 2 series of -20V P-channel MOSFETs. A variety of small surface mount packages are available to meet the diverse needs of our customers.

Features

• SSM3K79 Series: Low drain cut-off current, IDSS = 60nA (max) (VDS=30V)
• SSM3K15A series: Low gate leakage current, IGSS = 50nA (max) (VGS=±5V)

Application

• IoT devices
• Wearables devices
• Smartphones
• Laptop PCs
• Tablets, etc.

       This CMOS operational amplifier can amplify minute signals detected by various sensors with very low noises. By optimizing the process, the equivalent input noise voltage has been reduced.

Block Diagram

Description of Above Graphic

Application Circuit Examples