T10 LV-MV Si MOSFET - 80V T10 MOSFET
onsemi’s new T10 PowerTrench MOSFET technology (80V, 40V, 25V) delivers industry leading RDS(on), higher power density and reduced switching losses. The NTMFSCH1D4N08X (80V, 1.4 mΩ, 5 x 6 mm dual cool) and the NTTFSSCH1D3N04XL (40 V, 1.3 mΩ, 3.3 x 3.3 mm source down dual cool) adopt advanced Dual Cool package technology, featuring excellent thermal performance. The T10 MOSFETs outperform competitors’ products by at least 20% better FOM, enabling 98% peak efficiency and a power density of 5kW/in³ for IBC module.
The latest 80V source-down dual cool logic gate level power MOSFET technology with best-in-class Figure-of-Merit for fast switching application. Lower
on-resistance and less output capacitance can reduce the conduction and switching loss to accomplish higher efficiency requirement.
Features
- Advanced source-down center gate dual-cooling package technology (3.3 x 3.3 mm) with excellent thermal conduction
- Low RDS(on) to minimize conduction loss
- Low QRR with soft recovery to minimize ERR loss and voltage spike
- Low Qg and capacitance to minimize driving and switching losses
- Pb−Free, Halogen Free / BFR Free & RoHS compliant
Application
- Target applications: Datacenter/IBC, Industrial PSU, Cloud System
