Infineon's CoolGaN™ portfolio offers a comprehensive range of power transistors designed for next-generation power conversion systems.
- Medium-Voltage CoolGaN™ Transistors
- High-Voltage CoolGaN™ Transistors
Medium-Voltage CoolGaN™ Transistors
60V to 150V Solutions
Designed for
- DC-DC conversion
- Telecom power supplies
- Data center architectures
- Battery-powered systems
Benefits
- Ultra-low switching losses
- High-frequency operation
- Smaller magnetic components
- Higher power density
High-voltage CoolGaN™ transistors
400V to 700V solutions
Optimized for
- Server power supplies
- AI data centers
- EV charging infrastructure
- Renewable energy systems
- Industrial power conversion
- Consumer fast chargers
Benefits
- Higher efficiency
- Reduced system size
- Lower cooling requirements
- Increased power throughput
- Improved total cost of ownership
Infineon's high-voltage CoolGaN™ transistors are engineered for fast switching performance with minimal losses and are available in multiple package options.
Applications
AI servers, adapters, lighting, and more
Solar, OBC
Motor drives
AI Data Centers
Electric Vehicles
Renewable Energy
Robotics & Industrial Automation
Consumer Power
Whitepaper
Unlock the full performance potential of GaN power transistors
Download the free white paper today and learn how to simplify your GaN design challenges.
Resources to learn more GaN
Free White Paper Download
Unlock the full performance potential of GaN power transistors. Discover proven gate drive approaches, design considerations, and practical recommendations to achieve higher efficiency, improved reliability, and optimized power density in next-generation power electronics.
Download the free white paper today and learn how to simplify your GaN design challenges.
Gallium Nitride (GaN) technology is transforming power conversion with faster switching speeds, lower switching losses, and the ability to achieve exceptional efficiency and power density. Infineon's CoolGaN™ transistors are designed to support applications ranging from AI data centers and renewable energy systems to EVs and advanced consumer electronics.
However, extracting maximum performance from GaN devices requires careful attention to gate drive design.
In this white paper, you'll discover:
- Key gate drive configurations for GaN power transistors
- Advantages and trade-offs of different driving approaches
- Techniques for minimizing switching losses and parasitic effects
- Best practices for improving system robustness and reliability
- Recommendations for optimizing efficiency and power density
- Design insights from Infineon's GaN experts
This technical white paper is ideal for:
- Power Electronics Engineers
- System Architects
- Hardware Design Engineers
- Power Supply Designers
- EV & E-Mobility Developers
- Data Center Power System Engineers
- Renewable Energy System Designers
Whether you are evaluating GaN technology or optimizing an existing design, this guide provides practical knowledge to help accelerate development and reduce risk.
Master Gate Drive Design
Gain a clear understanding of the most common gate drive topologies and how to select the right approach for your application.
Improve Efficiency
Learn how optimized gate drive strategies can help reduce losses and maximize the benefits of high-speed GaN switching.
Increase Reliability
Understand critical considerations that impact robustness, EMI performance, and long-term system operation.
Speed Up Development
Apply proven design techniques that can shorten your learning curve and help bring products to market faster.