Gallium Nitride FETs (GaN)
A wide bandgap semiconductor device with advantages of higher breakdown voltage, improved switching performance, lower on resistance and higher thermal conductivity compated to the standard silicon based device.
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Gallium Nitride (GaN) Transistor, 650 V, 47.2 A, 41 Milliohms, 22 nC, TO-247, 3 Pins, Surface Mount
Avnet Manufacturer Part #: GAN041-650WSBQ
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Gallium Nitride (GaN) Transistor, 12.5 A, 10.1 nC, WLCSP, 16 Pins, Surface Mount
Avnet Manufacturer Part #: GANB8R0-040CBA/S1Z
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Gallium Nitride (GaN) Transistor, 14 A, 10.1 nC, WLCSP, Surface Mount
Avnet Manufacturer Part #: GANB8R0-040CBAZ
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Gallium Nitride (GaN) Transistor, 650 V, 27 A, 0.098 ohm, 5.2 nC, TOLL, Surface Mount
Avnet Manufacturer Part #: GNP2070TD-ZTR
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