SI4178DY-T1-GE3
晶体管, MOSFET, N沟道, 12 A, 30 V, 0.017 ohm, 10 V, 2.8 V
- Halogen-free According to IEC 61249-2-21 Definition
- TrenchFET Power MOSFET
- 100 % Rg and UIS Tested
- Compliant to RoHS Directive 2002/95/EC
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| N Channel | ||
| 12 | ||
| 21 mOhm | ||
| 30 | ||
| 2.8 | ||
| 8 | ||
| 150 °C | ||
| 5 | ||
| SOIC | ||
| Surface Mount |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | null |
| ECCN: | EAR99 |
| HTSN: | PARTS... |
| Schedule B: | PARTS... |
Factory Lead Time: