SI1922EDH-T1-GE3
双路场效应管, MOSFET, 双N沟道, 1.3 A, 20 V, 0.165 ohm, 4.5 V, 400 mV
The SI1922EDH-T1-GE3 is a dual N-channel MOSFET intended for small to medium load applications where a miniaturized package is required. It is compatible with load switch for portable applications.
- Halogen-free
- ESD protected device
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| Dual N Channel | ||
| 1.3 | ||
| 198 | ||
| 20 | ||
| 6 | ||
| 150 °C | ||
| 1.25 | ||
| SOT-363 |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | null |
| ECCN: | EAR99 |
| HTSN: | PARTS... |
| Schedule B: | PARTS... |
Factory Lead Time: