EM6M2T2R
双路场效应管, MOSFET, N和P沟道, 200 mA, 20 V, 0.7 ohm, 4 V, 1 V
Complex type MOSFETs(P+N) are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.
· Low voltage(1.2V) drive type
· Nch+Pch Small-signal MOSFET
· Small Surface Mount Package
· Pb Free/RoHS Compliant
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| N and P Channe | ||
| 0.2 | ||
| 0.2 | ||
| 1 | ||
| 1.2 | ||
| 20 | ||
| 20 | ||
| 6 | ||
| 150 °C | ||
| 150 | ||
| SOT-563 |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | null |
| ECCN: | EAR99 |
| HTSN: | PARTS... |
| Schedule B: | PARTS... |
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