AT45DB021E-SHN-T

The AT45DB021E is a 1.65V minimum, serial-interface sequential access Flash memory is ideally suited for a wide variety of digital voice, image, program code, and data storage applications. The AT45DB021E also supports the RapidS serial interface for applications requiring very high speed operation. Its 2,162,688 bits of memory are organized as 1,024 pages of 256 bytes or 264 bytes each. In addition to the main memory, AT45DB021E also contains one SRAM buffer of 256/264 bytes. The Buffer can be used as additional system scratch memory, and E2PROM emulation (bit or byte alterability) can be easily handled with a self-contained three step read-modify-write operation.Unlike conventional Flash memories that are accessed randomly with multiple address lines and a parallel interface, the Adesto Data Flash uses a serial interface to sequentially access its data. The simple sequential access dramatically reduces active pin count, facilitates simplified hardware layout, increases system reliability, minimizes switching noise, and reduces package size. The device is optimized for use in many commercial and industrial applications where high-density, low-pin count, low-voltage, and low-power are essential.To allow for simple in-system re-programmability, AT45DB021E does not require high input voltages for programming. The device operates from a single 1.65V to 3.6V power supply for the erase and program and read operations. The AT45DB021E is enabled through the Chip Select pin (CS) and accessed via a 3-wire interface consisting of the Serial Input (SI), Serial Output (SO), and the Serial Clock (SCK).

• Single 1.65V - 3.6V supply
• Serial Peripheral Interface (SPI) compatible
  • Supports SPI modes 0 and 3
  • Supports RapidS™ operation
• Continuous read capability through entire array
  • Up to 85MHz
  • Low-power read option up to 15MHz
  • Clock-to-output time (TV) of 6ns maximum
• User configurable page size
  • 256 bytes per page
  • 264 bytes per page (default)
  • Page size can be factory pre-configured for 256 bytes
• One SRAM data buffer (256/264 bytes)
• Flexible programming options
  • Byte/Page Program (1 to 256/264 bytes) directly into main memory
  • Buffer Write
  • Buffer to Main Memory Page Program
• Flexible erase options
  • Page Erase (256/264 bytes)
  • Block Erase (2KB)
  • Sector Erase (32KB)
  • Chip Erase (2-Mbits)
• Advanced hardware and software data protection features
  • Individual sector prote