NTMFS5C670NLT1G
Single N−Channel Power MOSFET 60V, 68A, 6.7mΩ Power MOSFET 60 V, 6.7 m?, 68 A, Single N−Channel
NTMFS5C670NLT1G is a single N-channel power MOSFET. It has low RDS(on) to minimize conduction losses and low QG and capacitance to minimize driver losses.
- Continuous drain current is 71A
- Power dissipation is 61W at (TC = 25°C)
- Drain-to-source breakdown voltage is 60V minimum at (VGS = 0V, ID = 250µA)
- Gate-to-source leakage current is 100nA maximum at (VDS = 0V, VGS = 20V)
- Threshold temperature coefficient is -4.7mV/°C typical at (TJ = 25°C)
- Input capacitance is 1400pF typical at (VGS = 0V, f = 1MHz, VDS = 25V)
- Turn-on delay time is 11ns typical at (VGS = 4.5V, VDS = 30V, ID = 35A, RG = 2.5 ohm)
- Rise time is 60ns typical at (VGS = 4.5V, VDS = 30V, ID = 35A, RG = 2.5 ohm)
- Zero gate voltage drain current is 10µA maximum at (TJ = 25°C)
- Junction temperature range from -55°C to +175°C, DFN5 package
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| N Channel | ||
| 71 | ||
| 6.1 | ||
| 60 | ||
| 2 | ||
| 5 | ||
| 175 °C | ||
| 61 | ||
| DFN | ||
| Surface Mount |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | null |
| ECCN: | EAR99 |
| HTSN: | 8541290095 |
| Schedule B: | 8541290080 |
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