NTMFS5C670NLT1G

NTMFS5C670NLT1G is a single N-channel power MOSFET. It has low RDS(on) to minimize conduction losses and low QG and capacitance to minimize driver losses.

• Continuous drain current is 71A
• Power dissipation is 61W at (TC = 25°C)
• Drain-to-source breakdown voltage is 60V minimum at (VGS = 0V, ID = 250µA)
• Gate-to-source leakage current is 100nA maximum at (VDS = 0V, VGS = 20V)
• Threshold temperature coefficient is -4.7mV/°C typical at (TJ = 25°C)
• Input capacitance is 1400pF typical at (VGS = 0V, f = 1MHz, VDS = 25V)
• Turn-on delay time is 11ns typical at (VGS = 4.5V, VDS = 30V, ID = 35A, RG = 2.5 ohm)
• Rise time is 60ns typical at (VGS = 4.5V, VDS = 30V, ID = 35A, RG = 2.5 ohm)
• Zero gate voltage drain current is 10µA maximum at (TJ = 25°C)
• Junction temperature range from -55°C to +175°C, DFN5 package