NTBG020N090SC1
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Manufacturer:onsemi
Product Category:
双极晶体管, MOSFETs, 碳化硅MOSFET和模块
Avnet Manufacturer Part #: NTBG020N090SC1
-
RoHS 10 Compliant -
Tariff Charges
- Low RDSon, ultra low gate charge (Qg tot), low output capacitance (Coss)
- 100% UIL tested
- Drain to source breakdown voltage is 900V min at VGS = 0V, ID = 1mA, TJ = 25°C
- Zero gate voltage drain current is 100µA max at VGS = 0V, TJ = 25°C
- Gate threshold voltage is 2.6V typ at VGS = VDS, ID = 20mA, TJ = 25°C
- Drain to source on resistance is 20mohm typ at VGS = 15V, ID = 60A, TJ = 25°C
- Total gate charge is 200nC typ at VGS = -5/15V, VDS = 720V, ID = 60A, TJ = 25°C
- 52ns rise time/13ns fall time at VGS = -5/15V, VDS = 720V, ID = 60A, RG = 2.5ohm, inductive load
- Operating junction and storage temperature range from -55 to +175°C
- D2PAK-7L package
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| N Channel | ||
| 112 A | ||
| 0.028 ohm | ||
| 900 V | ||
| 4.3 MV | ||
| Single | ||
| null | ||
| 175 °C | ||
| null | ||
| null | ||
| 18 V | ||
| null |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | null |
| ECCN: | EAR99 |
| HTSN: | 85412900 |
| Schedule B: | 85412900 |
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