NDT014L
晶体管, MOSFET, N沟道, 2.8 A, 60 V, 0.12 ohm, 10 V, 1.5 V
The NDT014L is a N-channel logic level enhancement-mode FET produced using high cell density DMOS technology. This very high density process is especially tailored to minimize ON-state resistance, provide superior switching performance and withstand high energy pulses in the avalanche and commutation modes. It is particularly suited for low voltage applications such as DC-to-DC conversion where fast switching, low in-line power loss and resistance to transients are needed.
- High density cell design for extremely low RDS (ON)
- High power and current handling capability in a widely used surface-mount package
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| N Channel | ||
| 2.8 | ||
| 200 mOhm | ||
| 60 | ||
| 3 | ||
| 4 | ||
| 150 °C | ||
| 3 | ||
| SOT-223 | ||
| Surface Mount |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | null |
| ECCN: | EAR99 |
| HTSN: | 8541290095 |
| Schedule B: | 8541290080 |
Factory Lead Time: