PDP SEO Portlet

NCV8402ASTT3G

Self-Protected N-Channel Power MOSFET

Official logo for onsemi
Manufacturer:onsemi
Product Category: 分立器件, 场效应管, 单MOSFET
Avnet Manufacturer Part #: NCV8402ASTT3G
Secondary Manufacturer Part#: NCV8402ASTT3G
  • Legend Information Icon RoHS 10 Compliant
  • Legend Information Icon Tariff Charges

NCV8402ASTT3G is a three-terminal protected low-side smart discrete device. The protection features include overcurrent, overtemperature, ESD and integrated drain-to-gate clamping for overvoltage protection. This device offers protection and is suitable for harsh automotive environments. The application includes switch a variety of resistive, inductive and capacitive loads, can replace electromechanical relays and discrete circuits, automotive/industrial.

  • Short-circuit protection, thermal shutdown with automatic restart
  • Overvoltage protection, integrated clamp for inductive switching
  • ESD protection, dV/dt robustness, analogue drive capability (logic level input)
  • AEC-Q101 qualified and PPAP capable, gate input current is 50µA typ at (VDS = 0V, VGS = 5V)
  • Slew-rate ON (70% to 50% VDD) is 0.8µVs typ at (VGS = 10V, VDD = 12V, ID = 2.5A, RL = 4.7 ohm)
  • Current limit is 4.3A typical at (VDS = 10V, VGS = 5.0V, TJ = 25°C)
  • Source-drain forward on voltage is 1V typ at (VGS = 0V, IS = 7A)
  • Gate threshold temperature coefficient 4mV/°C typical at (TJ = 25°C)
  • Operating junction temperature range from -40°C to +150°C
  • SOT-223 package

Technical Attributes

Find Similar Parts

Description Value
N
2
200@10V
42
4
150 °C

ECCN / UNSPSC / COO

Description Value
Country of Origin: null
ECCN: EAR99
HTSN: PARTS...
Schedule B: PARTS...
In Stock :  0
Additional inventory
Factory Lead Time: 98 Weeks
Price for: Each
Quantity:
Min:4000  Mult:4000  
USD $:
4000+
$0.37843
8000+
$0.35320
12000+
$0.34403
20000+
$0.33532
40000+
$0.32704
100000+
$0.31916
200000+
$0.31165