NCV8402ASTT3G
Self-Protected N-Channel Power MOSFET
NCV8402ASTT3G is a three-terminal protected low-side smart discrete device. The protection features include overcurrent, overtemperature, ESD and integrated drain-to-gate clamping for overvoltage protection. This device offers protection and is suitable for harsh automotive environments. The application includes switch a variety of resistive, inductive and capacitive loads, can replace electromechanical relays and discrete circuits, automotive/industrial.
- Short-circuit protection, thermal shutdown with automatic restart
- Overvoltage protection, integrated clamp for inductive switching
- ESD protection, dV/dt robustness, analogue drive capability (logic level input)
- AEC-Q101 qualified and PPAP capable, gate input current is 50µA typ at (VDS = 0V, VGS = 5V)
- Slew-rate ON (70% to 50% VDD) is 0.8µVs typ at (VGS = 10V, VDD = 12V, ID = 2.5A, RL = 4.7 ohm)
- Current limit is 4.3A typical at (VDS = 10V, VGS = 5.0V, TJ = 25°C)
- Source-drain forward on voltage is 1V typ at (VGS = 0V, IS = 7A)
- Gate threshold temperature coefficient 4mV/°C typical at (TJ = 25°C)
- Operating junction temperature range from -40°C to +150°C
- SOT-223 package
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| N | ||
| 2 | ||
| 200@10V | ||
| 42 | ||
| 4 | ||
| 150 °C |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | null |
| ECCN: | EAR99 |
| HTSN: | PARTS... |
| Schedule B: | PARTS... |