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NCV57001DWR2G

SiC/MOSFET/IGBT Gate Driver, Isolated High Current and High Efficiency, with Internal Galvanic Isolation

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Manufacturer:onsemi
Avnet Manufacturer Part #: NCV57001DWR2G
Secondary Manufacturer Part#: NCV57001DWR2G
  • Legend Information Icon RoHS 10 Compliant
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NCV57001DWR2G is a high-current single-channel IGBT gate driver with internal galvanic isolation, designed for high system efficiency and reliability in high-power applications. Its features include complementary inputs, open drain FAULT, and Ready outputs, active Miller clamp, accurate UVLOs, DESAT protection, soft turn-off at DESAT, and separate high and low (OUTH and OUTL) driver outputs for system design convenience. NCV57001 accommodates both 5V and 3.3V signals on the input side and a wide bias voltage range on the driver side including negative voltage capability.

  • High current output (+4/-6A) at IGBT Miller plateau voltages
  • Short propagation delay with accurate matching, active miller clamp to prevent spurious gate turn-on
  • DESAT protection with programmable delay
  • Negative voltage (down to -9V) capability for DESAT
  • Soft turn off during IGBT short circuit, IGBT gate clamping during short circuit
  • Tight UVLO thresholds for bias flexibility, wide bias voltage range including negative VEE2
  • 5000V galvanic isolation (to meet UL1577 requirements)
  • High transient immunity, high electromagnetic immunity
  • 3.3V to 5V input supply voltage range, designed for AEC-Q100 Certification
  • SOIC-16 wide body package, ambient temperature range from -40 to 125°C

Technical Attributes

Find Similar Parts

Description Value
High Side, Low Side, Low Sid
High and Low Side
Surface Mount
MSL 1 - Unlimited
1
-40 to 125 °C
16SOIC
7.8 A
16
Automotive
SOIC

ECCN / UNSPSC / COO

Description Value
Country of Origin: null
ECCN: EAR99
HTSN: 8542390001
Schedule B: 8542390000
In Stock :  0
Additional inventory
Factory Lead Time: 266 Weeks
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