NCV57001DWR2G
SiC/MOSFET/IGBT Gate Driver, Isolated High Current and High Efficiency, with Internal Galvanic Isolation
NCV57001DWR2G is a high-current single-channel IGBT gate driver with internal galvanic isolation, designed for high system efficiency and reliability in high-power applications. Its features include complementary inputs, open drain FAULT, and Ready outputs, active Miller clamp, accurate UVLOs, DESAT protection, soft turn-off at DESAT, and separate high and low (OUTH and OUTL) driver outputs for system design convenience. NCV57001 accommodates both 5V and 3.3V signals on the input side and a wide bias voltage range on the driver side including negative voltage capability.
- High current output (+4/-6A) at IGBT Miller plateau voltages
- Short propagation delay with accurate matching, active miller clamp to prevent spurious gate turn-on
- DESAT protection with programmable delay
- Negative voltage (down to -9V) capability for DESAT
- Soft turn off during IGBT short circuit, IGBT gate clamping during short circuit
- Tight UVLO thresholds for bias flexibility, wide bias voltage range including negative VEE2
- 5000V galvanic isolation (to meet UL1577 requirements)
- High transient immunity, high electromagnetic immunity
- 3.3V to 5V input supply voltage range, designed for AEC-Q100 Certification
- SOIC-16 wide body package, ambient temperature range from -40 to 125°C
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| High Side, Low Side, Low Sid | ||
| High and Low Side | ||
| Surface Mount | ||
| MSL 1 - Unlimited | ||
| 1 | ||
| -40 to 125 °C | ||
| 16SOIC | ||
| 7.8 A | ||
| 16 | ||
| Automotive | ||
| SOIC |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | null |
| ECCN: | EAR99 |
| HTSN: | 8542390001 |
| Schedule B: | 8542390000 |