NCP5104DR2G
Single Input High and Low Side Power MOSFET Driver
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Manufacturer:onsemi
Product Category:
Power Management, Drivers & Controllers, Gate Drivers
Avnet Manufacturer Part #: NCP5104DR2G
Secondary Manufacturer Part#: NCP5104DR2G
- RoHS 10 Compliant
- Tariff Charges
The NCP5104DR2G is a high voltage Power Gate Driver providing two outputs for direct drive of 2 N-channel power MOSFETs or IGBTs arranged in a half-bridge configuration. It uses the bootstrap technique to insure a proper drive of the high-side power switch.
- High and low drive outputs
- Up to VCC swing on input pins
- Extended allowable negative bridge pin voltage swing to -10V for signal propagation
- Matched propagation delays between both channels
- 1 Input with internal fixed dead time (520ns)
- Under VCC lockout (UVLO) for both channels
- Pin-to-Pin-compatible with industry standards
- Rugged and flexible design
- Robust design
- Low level input for micro-controller operation
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| Half Bridge | ||
| Inverting|Non-Inverting | ||
| High and Low Side | ||
| 620 ns | ||
| 3.3V|5V | ||
| Matte Tin | ||
| 260 | ||
| 75 ns | ||
| 800 ns | ||
| 160 ns | ||
| Surface Mount | ||
| MSL 1 - Unlimited | ||
| 2 | ||
| 8 | ||
| 2 | ||
| 2 | ||
| -55 to 150 °C | ||
| 125 °C | ||
| -40 °C | ||
| 100 ns | ||
| 30 Ohm | ||
| 8SOIC N | ||
| 8 | ||
| IGBT, MOSFET, Mosfet | ||
| 5 x 4 x 1.5 mm | ||
| No | ||
| 500 mA | ||
| 250 mA | ||
| SOIC N | ||
| 20 V | ||
| 10 V |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | null |
| ECCN: | EAR99 |
| HTSN: | PARTS... |
| Schedule B: | PARTS... |