MMBTA06LT1G
NPN Bipolar Transistor. ONSSPCTRNSTVU6M5P;
MMBTA06LT1G is a driver transistor.
- Collector-emitter voltage is 80VDC min (IC = 1.0mAdc, IB = 0, TA = 25°C)
- Emitter-base breakdown voltage is 4.0VDC min (IE = 100ADC, IC = 0, TA = 25°C
- Collector current - continuous is 500mAdc
- Electrostatic discharge HBM Class 3B, MM Class C, CDM Class IV
- Total device dissipation FR-5 board is 225mW max (TA = 25°C)
- Thermal resistance, junction-to-ambient is 556°C/W max
- DC current gain is 100 min (IC = 10mAdc, VCE = 1.0VDC, TA = 25°C)
- Current-gain - bandwidth product is 100MHz min (IC = 10mA, VCE = 2.0 V, f = 100MHz, TA = 25°C)
- SOT-23 package
- Junction temperature range from -55 to +150°C
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| 80 V | ||
| 500 mA | ||
| 100 | ||
| 3 | ||
| 150 °C | ||
| 225 mW | ||
| MMBTA06L Series | ||
| SOT-23 | ||
| Surface Mount | ||
| NPN | ||
| 100 MHz |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | null |
| ECCN: | EAR99 |
| HTSN: | PARTS... |
| Schedule B: | PARTS... |
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