MJE13007G
8.0 A, 400 V NPN Bipolar Power Transistor. ONSSPCTRNSTLT1T0R;
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Manufacturer:onsemi
Product Category:
Discretes, Bipolar Transistors, Single Bipolar Transistors
Avnet Manufacturer Part #: MJE13007G
Secondary Manufacturer Part#: MJE13007G
- RoHS 10 Compliant
- Tariff Charges
The MJE13007G is a Silicon NPN Bipolar Power Transistor designed for high voltage and high speed power switching inductive circuits where fall time is critical. It is particularly suited for 115 and 220V switch mode applications such as switching regulators, inverters, motor controls, solenoid/relay drivers and deflection circuits.
- SOA and switching applications
- Collector-base voltage (Vcbo = 700V)
- Emitter-base voltage (Vcbo = 9V)
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| 400 V | ||
| 8 A | ||
| 4 | ||
| 3 | ||
| 150 °C | ||
| 80 W | ||
| TO-220 | ||
| Through Hole | ||
| NPN | ||
| 14 |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | null |
| ECCN: | EAR99 |
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