H11G2SR2M
6-Pin DIP High Voltage Photodarlington Output Optocoupler. ONSSPCISTNJZ8E4V;
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Manufacturer:onsemi
Product Category:
Optoelectronics, OptoCouplers, Transistor & Photovoltaic Output PhotoCouplers
Avnet Manufacturer Part #: H11G2SR2M
Secondary Manufacturer Part#: H11G2SR2M
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RoHS 10 Compliant -
Tariff Charges
H11G2SR2M is a photo darlington-type optically coupled optocoupler. The device has gallium arsenide infrared emitting diode coupled with a silicon darlington connected phototransistor which has an integral base-emitter resistor to optimize elevated temperature characteristics. Typical applications include CMOS logic interface, telephone ring detector, low input TTL interface, power supply isolation and replace pulse transformer.
- High BVCEO 80V minimum
- High sensitivity to low input current (minimum 500% CTR at IF = 1mA)
- Low leakage current at elevated temperature
- UL1577, 4170VACRMS for 1min
- DIN-EN/IEC60747-5-5, 850 V peak working insulation voltage
Technical Attributes
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| Description | Value | |
|---|---|---|
| 60 mA | ||
| Matte Tin | ||
| 260 | ||
| 80 V | ||
| 5250 Vrms | ||
| Surface Mount | ||
| MSL 1 - Unlimited | ||
| 1 | ||
| -40 to 100 °C | ||
| DC | ||
| 6PDIP SMD White | ||
| 6 | ||
| 8.89 x 6.6 x 3.53 mm | ||
| PDIP SMD |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | null |
| ECCN: | EAR99 |
| HTSN: | 8541408000 |
| Schedule B: | 8541408000 |
Factory Lead Time: