FQT7N10LTF
Power MOSFET, N-Channel, Logic Level, QFET®, 100 V, 1.7 A, 350 mO, SOT-223
The FQT7N10LTF is a N-channel enhancement-mode Power MOSFET produced using planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce ON-state resistance, provide superior switching performance and high avalanche energy strength. It is suitable for switched mode power supplies, audio amplifier and variable switching power applications.
- 100% avalanche tested
- 5.8nC typical low gate charge
- 10pF typical low Crss
Technical Attributes
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| Description | Value | |
|---|---|---|
| N Channel | ||
| 1.7 A | ||
| 350 mOhm | ||
| 100 V | ||
| 2 V | ||
| 4 | ||
| 150 °C | ||
| 2 W | ||
| SOT-223 | ||
| Surface Mount |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | null |
| ECCN: | EAR99 |
| HTSN: | 8541290095 |
| Schedule B: | 8541290080 |
Factory Lead Time: