FQD8P10TM
Power MOSFET, P-Channel, QFET®, -100 V, -6.6 A, 530 m?, DPAK
This P-Channel enhancement mode power MOSFET is produced using planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.
- -6.6 A, -100 V, RDS(on) = 530 mO (Max) @ VGS = -10 V, ID = -3.3 A
- Low Gate Charge (Typ. 12 nC)
- Low Crss (Typ. 30 pF)
- 100% Avalanche Tested
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| P Channel | ||
| 6.6 A | ||
| 530 mOhm | ||
| 100 V | ||
| 4 V | ||
| 3 | ||
| 150 °C | ||
| 44 W | ||
| TO-252 (DPAK) | ||
| Surface Mount |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | null |
| ECCN: | EAR99 |
| HTSN: | 8541290095 |
| Schedule B: | 8541290080 |
Factory Lead Time: