FQD8P10TM
Power MOSFET, P-Channel, QFET®, -100 V, -6.6 A, 530 m?, DPAK
The FQD8P10TM is a QFET® P-channel enhancement-mode Power MOSFET produced using planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce ON-state resistance, provide superior switching performance and high avalanche energy strength. It is suitable for switched mode power supplies, audio amplifier and variable switching power applications.
- 100% avalanche tested
- 12nC typical low gate charge
- 30pF typical low Crss
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| P Channel | ||
| 6.6 A | ||
| 530 mOhm | ||
| 100 V | ||
| 4 V | ||
| 3 | ||
| 150 °C | ||
| 44 W | ||
| TO-252 (DPAK) | ||
| Surface Mount |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | null |
| ECCN: | EAR99 |
| HTSN: | 8541290095 |
| Schedule B: | 8541290080 |
Factory Lead Time: