FQD13N10LTM
Power MOSFET, N-Channel, Logic Level, QFET®, 100 V, 10 A, 180 mO, DPAK
The FQD13N10LTM is a QFET® enhancement-mode N-channel Power MOSFET is produced using planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce ON-state resistance and to provide superior switching performance and high avalanche energy strength. It is suitable for switched mode power supplies, audio amplifier and variable switching power applications.
- Low level gate drive requirements allowing direct operation form logic drivers
- 100% avalanche tested
- 8.7nC typical low gate charge
- 20pF typical low Crss
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| N Channel | ||
| 10 | ||
| 180 mOhm | ||
| 100 | ||
| 2 | ||
| 3 | ||
| 150 °C | ||
| 40 | ||
| TO-252 (DPAK) | ||
| Surface Mount |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | null |
| ECCN: | EAR99 |
| HTSN: | 8541290095 |
| Schedule B: | 8541290080 |
Factory Lead Time: