FQB5N90TM
Power MOSFET, N-Channel, QFET®, 900 V, 5.4 A, 2.3 ?, D2PAK
The FQB5N90TM is a N-channel QFET® enhancement-mode power MOSFET produced using Fairchild Semiconductor's proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce ON-state resistance and to provide superior switching performance and high avalanche energy strength. This device is suitable for switched mode power supplies, active power factor correction (PFC) and electronic lamp ballasts.
- Low gate charge (31nC)
- Low Crss (13pF)
- 100% avalanche tested
Technical Attributes
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| Description | Value | |
|---|---|---|
| N Channel | ||
| 5.4 | ||
| 2.3 Ohm | ||
| 900 | ||
| 5 | ||
| 3 | ||
| 175 °C | ||
| 158 | ||
| TO-263 (D2PAK) | ||
| Surface Mount |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | null |
| ECCN: | EAR99 |
| HTSN: | 8541290095 |
| Schedule B: | 8541290080 |
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