FODM217D
Single Channel, DC Sensing Input, Phototransistor Optocoupler In Half-Pitch Mini-Flat 4-Pin Package. ONSSPCISTNJZ8E4V;
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Manufacturer:onsemi
Product Category:
Optoelectronics, OptoCouplers, Transistor & Photovoltaic Output PhotoCouplers
Avnet Manufacturer Part #: FODM217D
Secondary Manufacturer Part#: FODM217D
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RoHS 10 Compliant -
Tariff Charges
The FODM217 series consist of a gallium arsenide infrared emitting diode driving a phototransistor. The FODM214 series consist of two gallium arsenide infrared emitting diodes connected in inverse parallel for AC operation. Both were built in a compact, half-pitch, mini-flat, 4-pin package. The lead pitch is 2.54 mm.
- Current Transfer Ratio Ranges from 20 to 600% at IF = 5 mA, VCE = 5 V, TA = 25°C
- FODM217A - 80 to 160%
- FODM217B - 130 to 260%
- FODM217C - 200 to 400%
- FODM217D - 300 to 600%
- Safety and Regulatory Approvals:
- UL1577, 3750 VACRMS for 1 min
- DIN EN/IEC60747-5-5, 565 V Peak Working Insulation Voltage
- Applicable to Infrared Ray Reflow, 260°C
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| 3 us | ||
| 1.2 V | ||
| 200 mA | ||
| 260 °C | ||
| 50 mA | ||
| 80 V | ||
| 600@5mA % | ||
| 3750 Vrms | ||
| Surface Mount | ||
| MSL 1 - Unlimited | ||
| 1 | ||
| -55 to 110 °C | ||
| Transistor | ||
| 4SOP | ||
| 4 | ||
| 4.4 x 2.6 x 2 mm | ||
| 6 V | ||
| SOP | ||
| 2 us |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | null |
| ECCN: | EAR99 |
| HTSN: | 8541408000 |
| Schedule B: | 8541408000 |
Factory Lead Time: