FGH75T65SQDTL4
IGBT, 650 V, 75 A Field Stop Trench 650V, 75 A Field Stop Trench IGBT
Using novel field stop IGBT technology, ON semiconductor’s new series of field stop 4th generation IGBTs offer he optimum performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential.
- Maximum Junction Temperature: TJ = 175 o C
- Positive Temperature Co-efficient for Easy Parallel Operating
- High Current Capability
- Low Saturation Voltage: VCE(sat) = 1.6 V ( Typ.) @ I C = 75 A
- 100% of the Parts tested for ILM
- High Input Impedance
- Fast Switching
- Tighten Parameter Distribution
- RoHS Compliant
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| 1.6 V | ||
| 650 V | ||
| 4 | ||
| 175 °C | ||
| 375 W | ||
| TO-247 | ||
| Through Hole |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | null |
| ECCN: | EAR99 |
| HTSN: | 8541290095 |
| Schedule B: | 8541290080 |
Factory Lead Time: