FFSP0665B
Silicon Carbide Schottky Diode, Single, 650 V, 6 A, 15 nC, TO-220, 2 Pins
FFSP0665B is a 6A, 650V, Silicon Carbide (SiC) schottky diode - EliteSiC. Silicon Carbide (SiC) schottky diode uses a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost. Typical applications include general purpose, SMPS, solar inverter, UPS, power switching circuits.
- Max junction temperature 175C°
- Avalanche rated 26mJ
- High surge current capacity
- Positive temperature coefficient
- Ease of paralleling
- No reverse recovery / no forward recovery
- 15nC total capacitive charge at V = 400V
- 1.7V max forward voltage at IF = 6A, TC = 25°C
- 40µA max reverse current at VR = 650V, TC = 25°C
- 2 pin TO-220 package
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| 6 A | ||
| TO-220 | ||
| null | ||
| Through Hole | ||
| 2 Pins | ||
| 175 °C | ||
| null | ||
| null | ||
| 650 V | ||
| 15 nC |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | null |
| ECCN: | EAR99 |
| HTSN: | 85412900 |
| Schedule B: | 85412900 |
Factory Lead Time: