FFSH1065B-F085
Silicon Carbide (SiC) Schottky Diode - EliteSiC, 10A, 650V, D2, TO-247-2L
- Max Junction Temperature 175°C
- Avalanche Rated 51 mJ
- High Surge Current Capacity
- Positive Temperature Coefficient
- Ease of Paralleling
- No Reverse Recovery/No Forward Recovery
- AEC-Q101 Qualified
- These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| 11.5 A | ||
| TO-247 | ||
| null | ||
| Through Hole | ||
| 2 Pins | ||
| 175 °C | ||
| null | ||
| null | ||
| 650 V | ||
| 25 nC |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | null |
| ECCN: | EAR99 |
| HTSN: | 85411000 |
| Schedule B: | 85411000 |
Factory Lead Time: