FDS8880
晶体管, MOSFET, N沟道, 11.6 A, 30 V, 0.0079 ohm, 10 V, 2.5 V
The FDS8880 is a N-channel MOSFET produced using PowerTrench® process. It has been designed specifically to improve the overall efficiency of DC-to-DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS (ON) and fast switching speed.
- High performance Trench technology for extremely low RDS (ON)
- Low gate charge
- High power and current handling capability
Technical Attributes
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| Description | Value | |
|---|---|---|
| N Channel | ||
| 11.6 | ||
| 10 mOhm | ||
| 30 | ||
| 2.5 | ||
| 8 | ||
| 150 °C | ||
| 2.5 | ||
| SOIC | ||
| Surface Mount |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | null |
| ECCN: | EAR99 |
| HTSN: | 8541290095 |
| Schedule B: | 8541290080 |
Factory Lead Time: