FDN8601
N-Channel PowerTrench® MOSFET 100V, 2.7A, 109mO
This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench process that has been optimized for rDS(on), switching performance and ruggedness.
- Max rDS(on) = 109 mO at VGS = 10 V, ID = 1.5 A
- Max rDS(on) = 175 mO at VGS = 6 V, ID = 1.2 A
- High performance trench technology for extremely low rDS(on)
- High power and current handling capability in a widely used surface mount package
- Fast switching speed
- 100% UIL tested
- RoHS Compliant
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| N Channel | ||
| 2.7 A | ||
| 109 mOhm | ||
| 100 V | ||
| 4 V | ||
| 3 | ||
| 150 °C | ||
| 1.5 W | ||
| SOT-23 | ||
| Surface Mount |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | null |
| ECCN: | EAR99 |
| HTSN: | 8541290095 |
| Schedule B: | 8541290080 |
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