FDN342P
晶体管, MOSFET, P沟道, 2 A, -20 V, 0.062 ohm, -4.5 V, 1.05 V
The FDN342P is a 2.5V specified P-channel MOSFET produced using rugged gate version of advanced PowerTrench® process. It has been optimized for load switch and battery protection applications requiring a wide range of gate drive voltage ratings (2.5 to 12V).
- High performance Trench technology for extremely low RDS (ON)
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| P Channel | ||
| 2 | ||
| 80 mOhm | ||
| 20 | ||
| 1.5 | ||
| 3 | ||
| 150 °C | ||
| 500 | ||
| SOT-23 | ||
| Surface Mount |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | null |
| ECCN: | EAR99 |
| HTSN: | 8541210095 |
| Schedule B: | 8541210080 |
Factory Lead Time: