FDMS7678
晶体管, MOSFET, N沟道, 26 A, 30 V, 0.0047 ohm, 10 V, 1.5 V
This N-Channel MOSFET is produced using advanced Power Trench process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.
- Max rDS(on) = 5.5 mO at VGS = 10 V, ID = 17.5 A
- Max rDS(on) = 6.8 mO at VGS = 4.5 V, ID = 15 A
- High performance technology for extremely low rDS(on)
- Termination is Lead-free
- RoHS Compliant
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| N Channel | ||
| 72 | ||
| 5.5 mOhm | ||
| 30 | ||
| 3 | ||
| 8 | ||
| 150 °C | ||
| 41 | ||
| Power 56 | ||
| Surface Mount |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | null |
| ECCN: | EAR99 |
| HTSN: | 8541290095 |
| Schedule B: | 8541290080 |
Factory Lead Time: