FDMS5352
N-Channel Power Trench® MOSFET 60V, 49A, 6.7mO
- RoHS 10 Compliant
- Tariff Charges
This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
- Max rDS(on) = 6.7mO at VGS = 10V, ID = 13.6A
- Max rDS(on) = 8.2mO at VGS = 4.5V, ID = 12.3A
- Advanced Package and Silicon combination for low rDS(on)
- MSL1 robust package design
- 100% UIL Tested
- RoHS Compliant
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| N Channel | ||
| 49 A | ||
| 6.7 mOhm | ||
| 60 V | ||
| 3 V | ||
| 8 | ||
| 150 °C | ||
| 104 W | ||
| PowerTrench Series | ||
| PQFN | ||
| Surface Mount |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | null |
| ECCN: | EAR99 |
| HTSN: | 8541290095 |
| Schedule B: | 8541290080 |